Characterisation Of Ballistic Carbon Nanotube Field-Effect Transistor

Characterisation Of Ballistic Carbon Nanotube Field-Effect Transistor. The carbon nanotube field effect transistor (cnfet) is one of the most promising candidates to become successor of silicon cmos in the near future because of its better. Scaling process of silicon transistor, particularly mosfet, in the past decades had increased the.

5 Shortchanneltransistor leakage current mechanisms reversebias
5 Shortchanneltransistor leakage current mechanisms reversebias from www.researchgate.net

Further analysis is also made to see the effect. The simulation study is carried out using matlab program and the result obtained is used to compare the device performance with mosfet. Scaling process of silicon transistor, particularly mosfet, in the past decades had increased the.

Because Of The Strong Covalent.

The simulation study is carried out using matlab program and the result obtained is used to compare the device performance with mosfet. Further analysis is also made to see the effect. Scaling process of silicon transistor, particularly mosfet, in the past decades had increased the.

The Carbon Nanotube Field Effect Transistor (Cnfet) Is One Of The Most Promising Candidates To Become Successor Of Silicon Cmos In The Near Future Because Of Its Better.

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